Igisubizo gihujwe na Silicon Carbide Tile Ikiranga Ishusho

Igisubizo cyahujwe na Silicon Carbide Tile

Ibisobanuro bigufi:

Imyitwarire ya silicon karbide izwi kandi nka siliconized silicon carbide cyangwa SiSiC, ikorwa no gucengeza ibice bikozwe mu mvange ya SiC na karubone hamwe na silikoni y'amazi.Silicon ikora hamwe na karubone ikora SiC nyinshi ihuza ibice byambere bya SiC, Silicon irenze yose yuzuza imyenge isigaye mumubiri kandi ikabyara SiC-Si yuzuye, Kwinjira biha ibikoresho ibintu bidasanzwe byubukanishi, ubushyuhe, n amashanyarazi imitungo.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibyiza bya Reaction Bonded Silicon Carbide

1) Ubucucike buke.
2) Kurwanya ruswa.
3) Kwambara ibiturwanya.
4) Kurwanya Oxidation.
5) Kurwanya Abrasion.
6) Kurwanya neza ubushyuhe bwumuriro (bitewe nubushobozi buke bwo kwagura ubushyuhe hamwe nubushyuhe bwo hejuru bwumuriro).
7) Imbaraga zidasanzwe ku bushyuhe bwo hejuru.
8) Kugenzura neza ibipimo bigoye.

Wambare ibicuruzwa birwanya: Isahani ya karibide ya silicon, amatafari ya karbide ya silicon, umurongo wa pine, Umuyoboro wa Cone, cyclone, nibindi.
Ibikoresho byo mu itanura: Isahani, urumuri, uruziga, gutwika Nozzle, urumuri ruzengurutse, urumuri rwa kare, urumuri rw'umwobo. Byoroshye, Sagger, nibindi.
Abandi: Nozzles
Gushyira mu bikorwa Reaction Bonded Silicon Carbide:
Carbide ya silicon yerekana ko ari amahitamo meza yo kwambara nko gukoresha imiyoboro, imiyoboro ya Nozzles, imiyoboro yo kugenzura imigezi hamwe n’ibikoresho binini byambara mu bucukuzi bw'amabuye y'agaciro kimwe n'inganda.

Ibipimo nyamukuru

Ibyiza	Ibice	SiSiC / RBSIC
Ubucucike bwinshi (SiC)	V01%	≥85
Ubucucike bwinshi	g / cm³	3.01
Ikigaragara	%	＜ 0.1
Modulus yo guturika kuri 20 ℃	Mpa	250
Modulus yo guturika kuri 1200 ℃	Mpa	280
Modulus ya elastique kuri 20 ℃	Gpa	330
Gukomera kuvunika	Mpa * m1 / 2	3.3
Amashanyarazi kuri 1200 ℃	wm^-1.k^-1	45
Kwiyongera k'ubushyuhe kuri 1200 ℃	a × 10^-6/ ℃	4.5
Kurwanya ubushyuhe bwa 1200 ℃		Byiza cyane
Coefficient de radiyo yubushyuhe		<0.9
Ubushyuhe bwo gukora	℃	1350